RFD3N08L Datasheet (Intersil Corporation)

RFD3N08L, N-Channel Power MOSFET

RFD3N08L, RFD3N08LSM Data Sheet July 1999 File Number 2836.4 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs The RFD3N08L and RFD3N08LSM are N-Channel enhancement mode silicon gate power ﬁeld effect transistors speciﬁcally designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers.

This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bia

RFD3N08L Features

* 3A, 80V

* rDS(ON) = 0.800Ω

* Temperature Compensating PSPICE® Model

* On Resistance vs Gate Drive Voltage Curves

* Peak Current vs Pulse Width Curve

* UIS Rating Curve

* 175oC Operating Temperature

* Related Literature - TB334 “Guidel