RFD4N06LSM Datasheet - Intersil Corporation

RFD4N06LSM N-Channel Power MOSFET

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RFD4N06L, RFD4N06LSM Data Sheet June 1999 File Number 2837.1 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs The RFD4N06L, RFD4N06LSM are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special gate oxide design which provides full rated conduction at gate b.

RFD4N06LSM Features

* 4A, 60V

* rDS(ON) = 0.600Ω

* Design Optimized for 5 Volt Gate Drive

* Can be Driven Directly From Q-MOS, N-MOS, or TTL Circuits

* SOA is Power Dissipation Limited

* 175oC Rated Junction Temperature

* Logic Level Gate

* High Input Impe

RFD4N06LSM Datasheet (38.38 KB)

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Datasheet Details

Part number:

RFD4N06LSM

Manufacturer:

Intersil Corporation

File Size:

38.38 KB

Description:

N-channel power mosfet.

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