RFL2N06 Datasheet (Intersil Corporation)

RFL2N06, N-Channel Power MOSFET

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

These ty

RFL2N06 Features

* 2A, 50V and 60V

* rDS(ON) = 0.95Ω

* SOA is Power-Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Majority Carrier Device

* Related Literature - TB334 “Guidelines for Solderi