RFL2N06 N-Channel Power MOSFET

Intersil Corporation

Description

Semiconductor RFL2N05, RFL2N06 2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs .
These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching conv.

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Datasheet Specifications

Part number: RFL2N06
Manufacturer: Intersil Corporation
File Size: 44.98 KB
Datasheet: RFL2N06_IntersilCorporation.pdf
Description: N-Channel Power MOSFET

Features

* 2A, 50V and 60V
* rDS(ON) = 0.95Ω
* SOA is Power-Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Majority Carrier Device
* Related Literature - TB334 “Guidelines for Solderi

Applications

* such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09378. January 1998

RFL2N06 Distributors

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RFL2N06 N-Channel Power MOSFET Intersil Corporation

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