RFL2N06 Datasheet - Intersil Corporation

RFL2N06 N-Channel Power MOSFET

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These ty.

RFL2N06 Features

* 2A, 50V and 60V

* rDS(ON) = 0.95Ω

* SOA is Power-Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Majority Carrier Device

* Related Literature - TB334 “Guidelines for Solderi

RFL2N06 Datasheet (44.98 KB)

RFL2N06 Datasheet Preview — Preview of RFL2N06 PDF

Datasheet Details

Part number:

RFL2N06

Manufacturer:

Intersil Corporation

File Size:

44.98 KB

Description:

N-channel power mosfet.

📁 Related Datasheet

RFL2N05 N-Channel Power MOSFET (Intersil Corporation)

RFL2N06L N-Channel Power MOSFET (Intersil Corporation)

RFL1N08 N-Channel Power MOSFET (Intersil Corporation)

RFL1N10 N-Channel Power MOSFET (Intersil Corporation)

RFL1N10L N-Channel Power MOSFET (Intersil Corporation)

RFL1N12 N-Channel Power MOSFET (Intersil Corporation)

RFL1N12L N-Channel Power MOSFET (Intersil Corporation)

RFL1N15 N-Channel Power MOSFET (Intersil Corporation)

TAGS

RFL2N06 N-Channel Power MOSFET Intersil Corporation

RFL2N06 Distributor