RFP2N10L Datasheet (Intersil Corporation)

RFP2N10L, N-Channel Power MOSFET

only.

Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders.

Information furnished by Intersil is believed to be accurate and reliab

RFP2N08L, RFP2N10L Data Sheet July 1999 File Number 2872.2 2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs The RFP2N08L and RFP2N10L are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers.

This performance is accomplished through a special gate oxide design which provides full rated conductance at g

RFP2N10L Features

* 2A, 80V and 100V

* rDS(ON) = 1.050Ω

* Design Optimized for 5V Gate Drives

* Can be Driven Directly from QMOS, NMOS, TTL Circuits

* Compatible with Automotive Drive Requirements

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds