RFP2N12 Datasheet (Intersil Corporation)

RFP2N12, N-Channel Power MOSFET

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

These typ

RFP2N12 Features

* 2A, 120V and 150V

* rDS(ON) = 1.750Ω

* Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ /Title (RFP2N 12, RFP2N1 5) /Subject (2A, 120V and 150V, 1.75 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChan