RFP2N12 - N-Channel Power MOSFET

Intersil Corporation

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Datasheet Details

Part number	RFP2N12
Manufacturer	Intersil Corporation
File Size	35.20 KB
Description	N-Channel Power MOSFET
Datasheet	RFP2N12_IntersilCorporation.pdf

RFP2N12 Product details

Description

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Features

2A, 120V and 150V.
rDS(ON) = 1.750Ω.
Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ /Title (RFP2N 12, RFP2N1 5) /Subject (2A, 120V and 150V, 1.75 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO220AB) /Creator () /DOCIN FO pdfmark Ordering Information PART NUMBER RFP2N12 RFP2N15.

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Published: Apr 16, 2005 |