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RFP2N12 N-Channel Power MOSFET

RFP2N12 Description

Semiconductor RFP2N12, RFP2N15 2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs .
These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching conv.

RFP2N12 Features

* 2A, 120V and 150V
* rDS(ON) = 1.750Ω
* Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” [ /Title (RFP2N 12, RFP2N1 5) /Subject (2A, 120V and 150V, 1.75 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChan

RFP2N12 Applications

* such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09196. BRAND RFP2N12 R

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Datasheet Details

Part number
RFP2N12
Manufacturer
Intersil Corporation
File Size
35.20 KB
Datasheet
RFP2N12_IntersilCorporation.pdf
Description
N-Channel Power MOSFET

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N-Channel Power MOSFET Intersil Corporation
Intersil Corporation RFP2N12-like datasheet