RFP2N12L Datasheet (Intersil Corporation)

RFP2N12L, N-Channel Power MOSFET

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RFP2N12L Data Sheet April 1999 File Number 2874.2 2A, 120V, 1.750 Ohm, Logic Level, N-Channel Power MOSFET The RFP2N12L is an N-Channel enhancement mode silicon gate power ﬁeld effect transistor speciﬁcally designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers.

This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V - 5V range,

RFP2N12L Features

* 2A, 120V

* rDS(ON) = 1.750Ω

* Design Optimized for 5V Gate Drives

* Can be Driven Directly from QMOS, NMOS, TTL Circuits

* Compatible with Automotive Drive Requirements

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds