ISL71441SLH - Radiation Hardened 12V Half-Bridge GaN FET Driver
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ISL71441SLH Radiation Hardened 12V Half-Bridge GaN FET Driver Datasheet The ISL71441SLH is a Radiation Hardened PWM input 12V Half Bridge GaN FET Driver that drives low rDS(ON) Gallium Nitride FETs for DC/DC switching regulators.
An integrated programmable GaN FET gate drive voltage, high-side bootstrap switch, and strong gate drive current provide a compact and robust GaN FET half-bridge driver.
The ISL71441SLH can interface directly to the ISL73847SLH dual-phase PWM buck controller to create
ISL71441SLH Features
* ▪ Qualified & Screened to DLA VID V62/25604
* Refer to Renesas Rad Hard Plastic Production and QCI Flow (R34ZZ0006EU)
* All screening and QCI is in accordance with SAE AS6294/1) ▪ Up to 20V bootstrap voltage half-bridge driver ▪ Programmable 4.5V to 5.5V gate drive voltage ▪ Single t
