ISL73033SLHM Datasheet - Intersil

ISL73033SLHM Radiation Hardened Driver-GaN Power Stage

Datasheet ISL73033SLHM Radiation Hardened Driver-GaN Power Stage with 100V GaN FET The ISL73033SLHM is a radiation hardened Driver-GaN power stage with a 4.5V gate driver and a 100V, 7.5mΩ enhancement-mode Gallium Nitride (GaN) FET in one package. The device simplifies the PCB layout by integrating a driver plus GaN FET in one package and is designed for isolated topologies and boost type configurations. The driver operates with a supply voltage from 4.5V to 13.2V and has both inverting (INB) .

ISL73033SLHM Features

* Undervoltage Lockout (UVLO) protection that ignores the inputs (IN/INB) and keeps the GaN FET in an OFF state whenever VDRV is below the UVLO threshold. The ISL73033SLHM inputs can withstand voltages up to 14.7V regardless of the VDD voltage, allowing the inputs to be connected directly to most PWM

ISL73033SLHM Datasheet (471.71 KB)