2N7002DW
FEATURE z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability
115m A
- SOT-363
6 5 4
1 2 3
APPLICATION z Load Switch for Portable Devices z DC/DC Converter
MARKING
Equivalent Circuit
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Drain-Source voltage
Gate-Source voltage
±20
Drain Current
Power Dissipation
RӨJA Thermal Resistance from Junction to Ambient 833
Junction Temperature
Tstg
Storage Temperature
-55-150
Unit V V m A m W ℃/W
℃ ℃
.cj-elec.
I,Sep,2016
MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 ℃ unless otherwise specified
Parameter
Symbol
Test...
