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2N7002DW - Dual N-channel MOSFET

General Description

SOT-363 parts are shipped in tape.

tape is made from a dissipative (carbon filled) polycarbonate resin.

The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent.

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Datasheet Details

Part number 2N7002DW
Manufacturer JCET
File Size 1.06 MB
Description Dual N-channel MOSFET
Datasheet download datasheet 2N7002DW Datasheet

Full PDF Text Transcription for 2N7002DW (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2N7002DW. For precise diagrams, and layout, please refer to the original PDF.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETs 2N7002DW Dual N-channel MOSFET V(BR)DSS 60 V RDS(on)MAX 5Ω@10V 7Ω@5V FEATURE z High...

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N-channel MOSFET V(BR)DSS 60 V RDS(on)MAX 5Ω@10V 7Ω@5V FEATURE z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability ID 115mA  SOT-363 6 5 4 1 2 3 APPLICATION z Load Switch for Portable Devices z DC/DC Converter MARKING Equivalent Circuit MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VDS Drain-Source voltage 60 VGS Gate-Source voltage ±20 ID Drain Current 115 PD Power Dissipation 150 RӨJA Thermal Resistance from Junction to Ambient 833 TJ Junction Temperature 150 Tstg Storage Temperature -55-150 Unit V V mA m

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