3DG8051
JCET
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Npn transistor.
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3DG8050 - NPN EPITAXIAL SILICON TRANSISTOR
(JILIN SINO)
NPN NPN EPITAXIAL SILICON TRANSISTOR
R
3DG8050
MAIN CHARACTERISTICS
Package
IC VCEO PC
1.5A 25V 1W
APPLICATIONS
z
z High frequency switch.
3DG8050M - SILICON NPN TRANSISTOR
(FOSHAN BLUE ROCKET)
S8050M(3DG8050M)
NPN /SILICON NPN TRANSISTOR
:。/Purpose: Power amplifier applications. : S8550M(3CG8550M)。/Features: Complementary pair with S8550M.
3DG8051 - TO-92L Plastic-Encapsulate Transistors
(TY Semiconductor)
.
3DG8 - NPN Silicon High Frequency Low Power Transistor
(Shaanxi Qunli Electric)
3DG8
NPN Silicon High Frequency Low Power Transistor
Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packagi.
3DG882 - NPN EPITAXIAL SILICON TRANSISTOR
(JILIN SINO)
NPN NPN EPITAXIAL SILICON TRANSISTOR
R
3DG882
MAIN CHARACTERISTICS
Package
IC VCEO PC (TO-126)
3A 30V 10W
APPLICATIONS
z
z High frequency.
3DG100 - NPN Silicon High Frequency Low Power Transistor
(Shaanxi Qunli)
Shaanxi Qunli Electric Co., Ltd
Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China
3DG100, 3DG102
NPN Silicon High Frequency Low Power Transistor
Featur.
CSD18504Q5A - SILICON NPN TRANSISTOR
(LZG)
CSD18504Q5A
.ti. SLPS366 – JUNE 2012
40V N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD18504Q5A
1
FEATURES
Ultra Low Qg and Qgd Low Th.
3DG101 - Silicon NPN high frequency low power transistor
(ETC)
3DG101 NPN
PCM ICM Tjm
Tstg V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO VBEsat VCEsat
hFE
fT
ICB=0.1mA ICE=0.1mA IEB=0.1mA VCB=10V VC.
3DG101 - NPN Silicon High Frequency Low Power Transistor
(Qunli Electric)
3DG101, 3DG110, 3DG111
NPN Silicon High Frequency Low Power Transistor
Features: 1. Using epitaxy planar technology structure. High working frequency.
3DG102 - NPN Silicon High Frequency Low Power Transistor
(Shaanxi Qunli)
Shaanxi Qunli Electric Co., Ltd
Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China
3DG100, 3DG102
NPN Silicon High Frequency Low Power Transistor
Featur.