EMB11
JCET
1.27MB
Dual digital transistors.
TAGS
📁 Related Datasheet
EMB10 - PNP Digital Transistors
(Rohm)
EMB10 / UMB10N / IMB10A
PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet
Parameter
VCC IC(MAX.)
R1 R2
Tr1 .
EMB10FHA - PNP -100mA -50V Complex Digital Transistors
(ROHM)
.
EMB11 - Dual Digital Transistors
(Rohm)
EMB11 / UMB11N / IMB11A
General purpose (dual digital transistors)
Datasheet
Parameter VCC
IC(MAX.) R1 R2
DTr1 and DTr2 -50V
-100mA 10kΩ 10kΩ
lFea.
EMB11A03G - MOSFET
(Excelliance MOS)
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
RDSON (MAX.)
11mΩ
ID 12A
UIS, Rg .
EMB12K03GP - MOSFET
(Excelliance MOS)
Dual Asymmetric N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH‐Q1 N‐CH‐Q2
BVDSS
30V 30V
RDSON .
EMB12K03V - MOSFET
(Excelliance MOS)
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH‐Q1 N‐CH‐Q2
BVDSS RDSON (MAX.)
30V 12mΩ
30.
EMB12N03A - MOSFET
(Excelliance MOS)
EMB12N03A
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
12mΩ
ID
25A
G
UIS, Rg 10.
EMB12N03G - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
EMB12N03G
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
D
BVDSS
30V
RDSON (MAX.)
12mΩ
ID
12A
G
UIS, Rg 10.
EMB12N03H - MOSFET
(Excelliance MOS)
EMB12N03H
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
11.5mΩ
ID
25A
G
UIS, Rg .
EMB12N03HR - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
EMB12N03HR
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
11.5mΩ
ID
25A
G
UIS, Rg.