* High hFE：hFE=-100-400
* Low VCE(sat)：VCE(sat) ≤ 0.3 V
* RoHS product TO-126 D-PAK ORDER MESSAGE - Halogen-Tu be 2SB1261-M-B 2SB1261-R-B Order codes - - - - Halogen Halogen-Re Halogen Halogen-R Free-Tube el Free-Reel eel N/A 2SB1261-M-C N/A N/A N/A 2SB1261-R-C N/A
2SB1261
JILIN SINO
545.73 KB
Pnp epitaxial silicon transistor.
PNP PNP Epitaxial Silicon Transistor
R
2SB1261
MAIN CHARACTERISTICS
IC VCEO PC
-3A -60V 2W
* 、
APPLICATIONS
* Designed for Audio Freq.
📁 Related Datasheet
2SB1260 - Power Transistor
(Rohm)
2SB1260 / 2SB1181
PNP -1.0A -80V Middle Power Transistor
Parameter
VCEO IC
Value
-80V -1.0A
lOutline
MPT3
Base Collector
Emitter
lFeatures
1) Suit.
2SB1260 - Power Transistor
(GME)
Power Transistor(-80V,-1A)
FEATURES
z High breakdown voltage and high current. BVCEO=-80V,IC=-1A
z Good hFEVLinearity. z Low VCE(sat). z Complements .
2SB1260 - PNP Transistor
(HOTTECH)
Plastic-Encapsulate Transistors
FEATURES
• High breakdown voltage and high current. BVCEO=-80V,IC=-1A • Good hFEVLinearity. • Low VCE(sat). • Complem.
2SB1260 - Plastic-Encapsulate Transistors
(WILLAS)
WILLAS
SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE
FM120-M+ 2SB1260 THRU
FM1200.
2SB1260 - PNP Transistor
(JinYu)
2SB1 260
TRANSISTOR(PNP)
SOT-89-3L
FEATURES z Power Transistor z High Voltage and Current z Low Collector-emitter saturation voltage z Complements .
2SB1260 - PNP Transistors
(Kexin)
SMD Type
Power Transistor 2SB1260
Features
High breakdown voltage and high current.BVCEO= -80V, IC=-1A Good hFE linearity. Low VCE(sat). Epitaxial p.
2SB1260 - PNP Transistor
(JCET)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SB1260 TRANSISTOR (PNP)
FEATURES z Power Transistor z H.
2SB1260 - PNP Plastic Encapsulated Transistor
(SeCoS)
Elektronische Bauelemente
2SB1260
-1 A, -80 V PNP Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-f.
