2SB1261-Z PNP SILICON EPITAXIAL TRANSISTOR

NEC

Description

DATA SHEET SILICON POWER TRANSISTOR 2SB1261-Z PNP SILICON EPITAXIAL TRANSISTOR .
The 2SB1261-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. High hFE hFE = 10.

📥 Download Datasheet

2SB1261-Z Datasheet Preview — Preview of 2SB1261-Z PDF

Datasheet Specifications

Part number: 2SB1261-Z
Manufacturer: NEC
File Size: 1.31 MB
Datasheet: 2SB1261-Z_NEC.pdf
Description: PNP SILICON EPITAXIAL TRANSISTOR

Features

* High hFE hFE = 100 to 400
* Low VCE(sat) VCE(sat) ≤ 0.3 V ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) Note 1 Base Current (DC) Total Power Dissipation (TA = 25

2SB1261-Z Distributors

📁 Related Datasheet

2SB1261-K 2SB1261 2SB1261L 2SB1260 2SB1260-HF 2SB1266

📌 All Tags

2SB1261-Z PNP SILICON EPITAXIAL TRANSISTOR NEC

NEC 2SB1261-Z-like datasheet