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2SB1261-Z - PNP SILICON EPITAXIAL TRANSISTOR

2SB1261-Z Description

DATA SHEET SILICON POWER TRANSISTOR 2SB1261-Z PNP SILICON EPITAXIAL TRANSISTOR .
The 2SB1261-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. High hFE hFE = 10.

2SB1261-Z Features

* High hFE hFE = 100 to 400
* Low VCE(sat) VCE(sat) ≤ 0.3 V ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) Note 1 Base Current (DC) Total Power Dissipation (TA = 25

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Datasheet Details

Part number
2SB1261-Z
Manufacturer
NEC
File Size
1.31 MB
Datasheet
2SB1261-Z_NEC.pdf
Description
PNP SILICON EPITAXIAL TRANSISTOR

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PNP SILICON EPITAXIAL TRANSISTOR NEC
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