Part number:
2SB1261-Z
Manufacturer:
NEC
File Size:
1.31 MB
Description:
Pnp silicon epitaxial transistor.
* High hFE hFE = 100 to 400
* Low VCE(sat) VCE(sat) ≤ 0.3 V ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) Note 1 Base Current (DC) Total Power Dissipation (TA = 25
2SB1261-Z
NEC
1.31 MB
Pnp silicon epitaxial transistor.
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..
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1 2. COLLECTOR
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High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) ≤0.3V
MAXIMUM RATIN.
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(BLUE ROCKET ELECTRONICS)
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hFE ，，。 Excelle.
2SB1261 - PNP Epitaxial Planar Silicon Transistors
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z High hFE hFE=100 to 400. z Low VCE(sat0 VCE(sat)≤0.3V.
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(JCET)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
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TO – 252
FEATURES z Low VCE(sat).
2SB1261 - PNP Epitaxial Silicon Transistor
(JILIN SINO)
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MAIN CHARACTERISTICS
IC VCEO PC
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、
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(BLUE ROCKET ELECTRONICS)
2SB1261L
Rev.E Mar.-2016
DATA SHEET
/ Descriptions
TO-126F PNP 。Silicon PNP transistor in a TO-126F Plastic Package.
/ Features
hFE ，，。 Excel.
