2SB1267 Datasheet - Sanyo Semicon Device

2SB1267 PNP/NPN Epitaxial Planar Silicon Transistors

2SB1267 Features

* Suitable for sets whose height is restricted.

* Low collector to emitter saturation voltage : VCE(sat)=

* 0.5V (PNP), 0.4V (NPN) max.

* Large current capacity. Package Dimensions unit:mm 2049B [2SB1267/2SD1903] ( ) : 2SB1267 Specifications E : Emitter C : Collector B : Base SA

Datasheet Details

2SB1267

Sanyo Semicon Device

129.33 KB

Pnp/npn epitaxial planar silicon transistors.

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