2N7002M Datasheet - Jiangsu Changjiang Electronics

2N7002M MOSFET

High cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particular.

2N7002M Features

* High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. APPLICATION N-Channel Enhancement Mode Field Effect Transistor www.DataSheet4U.com For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book

2N7002M_JiangsuChangjiangElectronics.pdf