2SD2098 Datasheet, Transistor, JinYu

2SD2098 Features

• Transistor z z Excellent DC current gain characteristics Complements the 2SB1386 SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VE

PDF File Details

Part number:

2SD2098

Manufacturer:

JinYu

File Size:

793.92kb

Download:

📄 Datasheet

Description:

Transistor.

TAGS

2SD2098

JinYu

📁 Related Datasheet

2SD2091 - NPN Transistor (Rohm)
Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM.

2SD2091 - NPN Transistor (INCHANGE)
isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2091 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 1A ·Low Collect.

2SD2092 - NPN TRANSISTOR (Toshiba Semiconductor)
2SD2092 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2092 Switching Applications Lamp, Solenoid Drive Applications Unit: mm • • High DC current.

2SD2093 - NPN Transistor (INCHANGE)
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Micaless package facilitating mounting. ·Large current capacity and large ASO. ·Low saturati.

2SD2093 - NPN Triple Diffused Planar Silicon Transistors (Sanyo Semicon Device)
Ordering number:EN3720 2SB1388 : PNP Epitaxial Planar Silicon Transistors 2SD2093 : NPN Triple Diffused Planar Silicon Transistors 2SB1388/2SD2093 Dr.

2SD2093 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package .. ·DARLINGTON ·Comple.

2SD2094 - Power Transistor (Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Vol.

2SD2095 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2095 .. DESCRIPTION ·With TO-3P(H)IS package ·Buil.

2SD2095 - Silicon NPN Power Transistors (Inchange Semiconductor)
isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- ：VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damp.

2SD2096 - NPN Transistor (Rohm)
Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM.