KF4N65F Datasheet, Transistor, KEC

KF4N65F Features

  • Transistor VDSS=650V, ID=3.6A Drain-Source ON Resistance : RDS(ON)(Max)=2.5 @VGS=10V Qg(typ.)= 12nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL KF4N65P KF4N65F Drain-Source Voltage V

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Part number:

KF4N65F

Manufacturer:

KEC

File Size:

411.10kb

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📄 Datasheet

Description:

N channel mos field effect transistor. This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent

Datasheet Preview: KF4N65F 📥 Download PDF (411.10kb)
Page 2 of KF4N65F Page 3 of KF4N65F

TAGS

KF4N65F
CHANNEL
MOS
FIELD
EFFECT
TRANSISTOR
KEC

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