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KF4N65FM - N-Channel MOSFET

KF4N65FM Description

SEMICONDUCTOR TECHNICAL DATA KF4N65FM N CHANNEL MOS FIELD EFFECT TRANSISTOR General .
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche charact.

KF4N65FM Features

* VDSS=650V, ID=3.6A Drain-Source ON Resistance : RDS(ON)(Max)=2.5 @VGS=10V Qg(typ. )= 15nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage Gate-Source Voltage VDSS VGSS @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Ene

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Datasheet Details

Part number
KF4N65FM
Manufacturer
KEC
File Size
381.71 KB
Datasheet
KF4N65FM-KEC.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET KEC
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