KF4N65FM Datasheet, Transistor, KEC

KF4N65FM Features

• Transistor VDSS=650V, ID=3.6A Drain-Source ON Resistance : RDS(ON)(Max)=2.5 @VGS=10V Qg(typ.)= 15nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage Gate-Source Voltage VDSS

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Part number:

KF4N65FM

Manufacturer:

KEC

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381.71kb

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📄 Datasheet

Description:

N channel mos field effect transistor. This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent

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KF4N65FM

KEC

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