Part number:
KF4N60I
Manufacturer:
KEC
File Size:
384.43 KB
Description:
N channel mos field effect transistor.
* VDSS= 600V, ID= 3.2A Drain-Source ON Resistance : RDS(ON)=2.5 Qg(typ) = 10nC @VGS = 10V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 600 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repeti
KF4N60I
KEC
384.43 KB
N channel mos field effect transistor.
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