KF4N65P Datasheet, Transistor, KEC

KF4N65P Features

• Transistor VDSS=650V, ID=3.6A Drain-Source ON Resistance : RDS(ON)(Max)=2.5 @VGS=10V Qg(typ.)= 12nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL KF4N65P KF4N65F Drain-Source Voltage V

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Part number:

KF4N65P

Manufacturer:

KEC

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411.10kb

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📄 Datasheet

Description:

N channel mos field effect transistor. This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent

TAGS

KF4N65P

KEC

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