Part number:
KF4N65P
Manufacturer:
KEC
File Size:
411.10 KB
Description:
N channel mos field effect transistor.
* VDSS=650V, ID=3.6A Drain-Source ON Resistance : RDS(ON)(Max)=2.5 @VGS=10V Qg(typ.)= 12nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL KF4N65P KF4N65F Drain-Source Voltage VDSS 650 Gate-Source Voltage VGSS 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy
KF4N65P
KEC
411.10 KB
N channel mos field effect transistor.
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