Part number:
KF4N60F
Manufacturer:
KEC
File Size:
381.75 KB
Description:
N channel mos field effect transistor.
* VDSS= 600V, ID= 4A Drain-Source ON Resistance : RDS(ON)=2.5 Qg(typ) = 10nC @VGS = 10V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage Gate-Source Voltage VDSS VGSS @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energ
KF4N60F
KEC
381.75 KB
N channel mos field effect transistor.
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