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KF4N60F - N-Channel MOSFET

KF4N60F Description

SEMICONDUCTOR TECHNICAL DATA KF4N60F N CHANNEL MOS FIELD EFFECT TRANSISTOR General .
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche charact.

KF4N60F Features

* VDSS= 600V, ID= 4A Drain-Source ON Resistance : RDS(ON)=2.5 Qg(typ) = 10nC @VGS = 10V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage Gate-Source Voltage VDSS VGSS @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energ

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Datasheet Details

Part number
KF4N60F
Manufacturer
KEC
File Size
381.75 KB
Datasheet
KF4N60F-KEC.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET KEC
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