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KMB7D0DN40QB Dual N-Channel MOSFET

KMB7D0DN40QB Description

SEMICONDUCTOR TECHNICAL DATA GENERAL .
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

KMB7D0DN40QB Features

* VDSS=40V, ID=7A. Drain to Source on Resistance. RDS(ON)=25m (Max. ) @VGS=10V RDS(ON)=45m (Max. ) @VGS=4.5V Maximum Ratings (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL PATING UNIT Drain to Source Voltage Gate to Source Voltage Drain Current Ta=25 (Note1) Pulsed VDSS VGSS ID IDP 40 V 2

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Datasheet Details

Part number
KMB7D0DN40QB
Manufacturer
KEC
File Size
831.55 KB
Datasheet
KMB7D0DN40QB-KEC.pdf
Description
Dual N-Channel MOSFET

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Dual N-Channel MOSFET KEC
KEC KMB7D0DN40QB-like datasheet