KMB7D0DN40QB Dual N-Channel MOSFET

KEC

Description

SEMICONDUCTOR TECHNICAL DATA GENERAL .
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

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Datasheet Specifications

Part number: KMB7D0DN40QB
Manufacturer: KEC
File Size: 831.55 KB
Datasheet: KMB7D0DN40QB-KEC.pdf
Description: Dual N-Channel MOSFET

Features

* VDSS=40V, ID=7A. Drain to Source on Resistance. RDS(ON)=25m (Max. ) @VGS=10V RDS(ON)=45m (Max. ) @VGS=4.5V Maximum Ratings (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL PATING UNIT Drain to Source Voltage Gate to Source Voltage Drain Current Ta=25 (Note1) Pulsed VDSS VGSS ID IDP 40 V 2

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KMB7D0DN40QB Dual N-Channel MOSFET KEC

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