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KMB7D1DP30QA Trench MOSFET

KMB7D1DP30QA Description

www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KMB7D1DP30QA Dual P-Ch Trench MOSFET General .
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

KMB7D1DP30QA Features

* VDSS=-30V, ID=-7.1A Drain-Source ON Resistance RDS(ON)=25m (Max. ) @ VGS=-10V RDS(ON)=41m (Max. ) @ VGS=-4.5V Super Hige Dense Cell Design 1 4 8 5 B1 B2 A DIM A B1 B2 D G H L P T MILLIMETERS _ 0.2 4.85 + _ 0.2 3.94 + _ 0.3 6.02 + _ 0.1 0.4 + 0.15+0.1/-0.05 _ 0.2 1.63 + _ 0.2 0.65 + 1.27 0.20+0.1/-0.

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Datasheet Details

Part number
KMB7D1DP30QA
Manufacturer
KEC
File Size
499.88 KB
Datasheet
KMB7D1DP30QA_KEC.pdf
Description
Trench MOSFET

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Trench MOSFET KEC
KEC KMB7D1DP30QA-like datasheet