KMB8D0P30QA P-Channel MOSFET

KEC

Description

SEMICONDUCTOR TECHNICAL DATA GENERAL .
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristisc.

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Datasheet Specifications

Part number: KMB8D0P30QA
Manufacturer: KEC
File Size: 51.47 KB
Datasheet: KMB8D0P30QA-KEC.pdf
Description: P-Channel MOSFET

Features

* VDSS=-30V, ID=-8A. Drain to Source On Resistance. RDS(ON)=20m (Max. ) @ VGS=-10V RDS(ON)=35m (Max. ) @ VGS=-4.5V MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL RATING UNIT Drain to Source Voltage Gate to Source Voltage Drain Current DC@Ta=25 (Note 1) Pulsed Drain P

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KMB8D0P30QA P-Channel MOSFET KEC

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