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KMB8D2N60QA Trench MOSFET

KMB8D2N60QA Description

www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KMB8D2N60QA N-Ch Trench MOSFET GENERAL .
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristisc.

KMB8D2N60QA Features

* VDSS=60V, ID=8.2A. Drain-Source ON Resistance. RDS(ON)=22m (Max. ) @ VGS=10V RDS(ON)=27m (Max. ) @ VGS=4.5V Super High Dense Cell Design 1 4 B1 B2 8 5 A MOSFET Maximum Ratings (Ta=25 CHARACTERISTIC Drain Source Voltage Gate Source Voltage DC@TA=25 Drain Current DC@TA=70 Pulsed Drain Source Diode Forw

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Datasheet Details

Part number
KMB8D2N60QA
Manufacturer
KEC
File Size
493.99 KB
Datasheet
KMB8D2N60QA_KEC.pdf
Description
Trench MOSFET

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Trench MOSFET KEC
KEC KMB8D2N60QA-like datasheet