MJD112 EPITAXIAL PLANAR NPN TRANSISTOR

KEC

Description

SEMICONDUCTOR TECHNICAL DATA MJD112/L EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL .

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Datasheet Specifications

Part number: MJD112
Manufacturer: KEC
File Size: 391.48 KB
Datasheet: MJD112-KEC.pdf
Description: EPITAXIAL PLANAR NPN TRANSISTOR

Features

* High DC Current Gain. : hFE=1000(Min. ), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Straight Lead (IPAK, "L" Suffix) Complementary to MJD117/L. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse

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📁 Related Datasheet

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MJD112 EPITAXIAL PLANAR NPN TRANSISTOR KEC

KEC MJD112-like datasheet

MJD112L

MJD117L