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MJD112 EPITAXIAL PLANAR NPN TRANSISTOR

MJD112 Description

SEMICONDUCTOR TECHNICAL DATA MJD112/L EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL .

MJD112 Features

* High DC Current Gain. : hFE=1000(Min. ), VCE=4V, IC=1A. Low Collector-Emitter Saturation Voltage. Straight Lead (IPAK, "L" Suffix) Complementary to MJD117/L. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse

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Datasheet Details

Part number
MJD112
Manufacturer
KEC
File Size
391.48 KB
Datasheet
MJD112-KEC.pdf
Description
EPITAXIAL PLANAR NPN TRANSISTOR

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EPITAXIAL PLANAR NPN TRANSISTOR KEC
KEC MJD112-like datasheet