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MJD117 EPITAXIAL PLANAR PNP TRANSISTOR

MJD117 Description

SEMICONDUCTOR TECHNICAL DATA MJD117/L EPITAXIAL PLANAR PNP TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL .

MJD117 Features

* High DC Current Gain. : hFE=1000(Min. ), VCE=-4V, IC=-1A. Low Collector-Emitter Saturation Voltage. Straight Lead (IPAK, "L" Suffix) Complementary to MJD112/L. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Puls

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Datasheet Details

Part number
MJD117
Manufacturer
KEC
File Size
392.56 KB
Datasheet
MJD117-KEC.pdf
Description
EPITAXIAL PLANAR PNP TRANSISTOR

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EPITAXIAL PLANAR PNP TRANSISTOR KEC
KEC MJD117-like datasheet