MJD117 EPITAXIAL PLANAR PNP TRANSISTOR

KEC

Description

SEMICONDUCTOR TECHNICAL DATA MJD117/L EPITAXIAL PLANAR PNP TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL .

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Datasheet Specifications

Part number: MJD117
Manufacturer: KEC
File Size: 392.56 KB
Datasheet: MJD117-KEC.pdf
Description: EPITAXIAL PLANAR PNP TRANSISTOR

Features

* High DC Current Gain. : hFE=1000(Min. ), VCE=-4V, IC=-1A. Low Collector-Emitter Saturation Voltage. Straight Lead (IPAK, "L" Suffix) Complementary to MJD112/L. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Puls

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MJD117 EPITAXIAL PLANAR PNP TRANSISTOR KEC

KEC MJD117-like datasheet

MJD117L

MJD112L