SNN0310Q Advanced N-Ch Trench MOSFET

KODENSHI KOREA

SNN0310Q Description

SNN0310Q Advanced N-Ch Trench MOSFET 100V, 3A N-Channel Power Trench MOSFET .

SNN0310Q Features

* Max. RDS(ON) = 150m at VGS = 10V, ID = 2A
* Low gate charge: Qg=18nC (Typ. )
* High performance trench technology for extremely low RDS(on)
* 100% avalanche tested
* Halogen free and RoHS compliant device Ordering Information Part Number Marking Package G D S SNN0310Q SN

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Datasheet Details

Part number: SNN0310Q
Manufacturer: KODENSHI KOREA
File Size: 362.85 KB
Datasheet: SNN0310Q-KODENSHIKOREA.pdf
Description: Advanced N-Ch Trench MOSFET

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Advanced N-Ch Trench MOSFET KODENSHI KOREA

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