2SA1617 - Transistor

Kexin

Datasheet Details

3 +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 2.4-0.1 +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -55 -50 -5 -100 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter C.

📁 2SA1617 Similar Datasheet

2SA1610 - HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR (NEC)
2SA1611 - PNP Transistor (JCET)
2SA1612 - AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR (NEC)
2SA1615 - PNP Silicon Transistor (NEC)
2SA1615-Z - PNP Silicon Transistor (NEC)
2SA1618 - Silicon PNP Transistor (Toshiba Semiconductor)
2SA1619 - Silicon PNP epitaxial planer type Transistor (Panasonic Semiconductor)
2SA1619A - Silicon PNP epitaxial planer type Transistor (Panasonic Semiconductor)

Other Datasheets by Kexin

Published: Oct 25, 2013 |