* Large current capacity: IC(DC):
* 10 A, IC(pulse):
* 15 A
* High hFE and low collector saturation voltage: hFE = 200 MIN. (@VCE =
* 2.0 V, IC =
* 0.5 A) VCE(sat) ≤
* 0.25 V (@IC =
* 4.0 A, IB =
* 0.05 A) QUALITY GRADES
* Sta
2SA1615
NEC
144.83 KB
Pnp silicon transistor.
DATA SHEET
SILICON POWER TRANSISTORS
2SA1615, 1615-Z
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SA1615 and 1615-Z are available.
📁 Related Datasheet
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(JCET)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
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(GME)
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FEATURES
High voltage VCEO=-50V. Excellent HFE Linearity. High DC current gain : hFE=200 typ. Complem.
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(NEC)
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(TRANSYS)
Transys
Electronics
L I M I T E D
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SOT-323
2SA1611
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TRANSISTOR (PNP)
1. BASE .
2SA1611 - Transistor
(Kexin)
SMD Type
PNP Silicon Epitaxia 2SA1611
Transistors IC
Features
High DC Current Gain. High Voltage.
1 Emitter 2 Base 3 Collector
Absolute Maximum Ra.
2SA1611 - PNP Silicon Plastic Encapsulated Transistor
(SeCoS)
2SA1611
Elektronische Bauelemente -0.1A , -60V PNP Silicon Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen .
2SA1611 - Transistor
(Jin Yu Semiconductor)
2SA1 61 1
TRANSISTOR(PNP)
FEATURES High DC Current Gain High Voltage Complementary to 2SC4177 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Sy.
