2SA1615-Z Description
DATA SHEET SILICON POWER TRANSISTORS 2SA1615, 1615-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1615 and 1615-Z are available.
of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and ap.
2SA1615-Z Features
* Large current capacity: IC(DC):
* 10 A, IC(pulse):
* 15 A
* High hFE and low collector saturation voltage: hFE = 200 MIN. (@VCE =
* 2.0 V, IC =
* 0.5 A) VCE(sat) ≤
* 0.25 V (@IC =
* 4.0 A, IB =
* 0.05 A)
QUALITY GRADES
* Sta
2SA1615-Z Applications
* ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO
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