* Large current capacity: IC(DC):
* 10 A, IC(pulse):
* 15 A
* High hFE and low collector saturation voltage: hFE = 200 MIN. (@VCE =
* 2.0 V, IC =
* 0.5 A) VCE(sat) ≤
* 0.25 V (@IC =
* 4.0 A, IB =
* 0.05 A) QUALITY GRADES
* Sta
2SA1615-Z Datasheet (144.83 KB)
2SA1615-Z
NEC
144.83 KB
Pnp silicon transistor.
DATA SHEET
SILICON POWER TRANSISTORS
2SA1615, 1615-Z
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SA1615 and 1615-Z are available.
📁 Related Datasheet
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The 2SA1615 and 1615-Z are available for the large current control in small due to the low saturation and ar.
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isc Silicon PNP Power Transistor
2SA1615-Z
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(NEC)
DATA SHEET
SILICON POWER TRANSISTORS
2SA1615, 1615-Z
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SA1615 and 1615-Z are available.
2SA1615 - PNP Transistor
(Stanson Technology)
P TYPE TTANSISTORS -10A
2SA1615, 1615-Z
The 2SA1615 and 1615-Z are available for the large current control in small due to the low saturation and ar.
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isc Silicon PNP Power Transistor
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DESCRIPTION ·Large current capacity:IC(DC)= -10A IC(pulse)=-15A ·High hFE and low saturation voltage:
hFE= .
2SA1610 - HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR
(NEC)
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2SA1611 - PNP Transistor
(JCET)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
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2SA1611 TRANSISTOR (PNP)
FEATURES High DC Curren.
