Excellent DC current gain characteristics. +0.1 4.00-0.1
Low VCE(sat). 1
NPN silicon transistor. +0.1 0.48-0.1
2
3
+0.1 0.80-0.1 +0.1 0.53-0.1 +0.1 0.44-0.1
+0.1 2.50-0.1
2.60
+0.1 -0.1
+0.1 3.00-0.1
0.40
1. Base 2. Collector 3. Emiitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 50 20 6.
2SD2098-Kexin.pdf
