FCX1147A Datasheet, Transistor, Kexin

FCX1147A Features

• Transistor 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 20 Amps. Extremely low saturation voltage E.g. 25mv Typ. Extremely low equivalent on-resistance. RCE(sa

PDF File Details

Part number:

FCX1147A

Manufacturer:

Kexin

File Size:

48.12kb

Download:

📄 Datasheet

Description:

Pnp silicon power switching transistor.

TAGS

FCX1147A

Kexin

📁 Related Datasheet

FCX1147A - PNP SILICON POWER (SWITCHING) TRANSISTOR (Zetex Semiconductors)
SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR ISSSUE 1 - DECEMBER 1998 FEATURES FCX1147A C * * * * * 2W POWER DISSIPATION 20A Peak Pulse Current E.

FCX1149A - PNP SILICON POWER (SWITCHING) TRANSISTOR (Zetex Semiconductors)
SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR ISSSUE 1 - SEPTEMBER 1999 FEATURES FCX1149A C * * * * * 2W POWER DISSIPATION 20A Peak Pulse Current .

FCX1151A - -40V PNP POWER TRANSISTOR (Diodes)
Green FCX1151A -40V PNP POWER TRANSISTOR IN SOT89 Features  BVCEO > -40V  IC = -3A High Continuous Current  ICM = -5A Peak Pulse Current  Very Lo.

FCX1047A - 10V NPN MEDIUM POWER TRANSISTOR (Diodes)
A Product Line of Diodes Incorporated Green FCX1047A 10V NPN MEDIUM POWER TRANSISTOR IN SOT89 Features • BVCEO > 10V • IC = 4A High Continuous Curren.

FCX1051A - NPN SILICON POWER TRANSISTOR (Zetex Semiconductors)
SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR ISSSUE 1 - DECEMBER 1998 FEATURES FCX1051A C * * * * * 2W POWER DISSIPATION 10A Peak Pulse Current E.

FCX1051A - 40V NPN MEDIUM POWER TRANSISTOR (DIODES)
FCX1051A 40V NPN MEDIUM POWER TRANSISTOR IN SOT89 Features • BVCEO > 40V • IC = 3.0A Continuous Current • Low Saturation Voltage VCE(sat) < 25mV @ 20.

FCX1053A - 75V NPN MEDIUM POWER TRANSISTOR (Diodes)
Features  BVCEO > 75V  IC = 3A high Continuous Current  ICM = 10A Peak Pulse Current  High Gain Holds up hFE > 300 @ IC=1A  Low Equivalent On-Res.

FCX458 - NPN Silicon Planar High Voltage Transistor (Kexin)
SMD Type Transistors NPN Silicon Planar High Voltage Transistor FCX458 Features 400 Volt VCEO Ptot= 1 Watt Absolute Maximum Ratings Ta = 25 Parame.

FCX458 - NPN HIGH VOLTAGE TRANSISTOR (Diodes)
Features  BVCEO > 400V  IC = 225mA Continuous Collector Current  ICM = 500mA Peak Pulse Current  Excellent hFE Characteristics up to 100mA  Low s.

FCX491 - NPN MEDIUM POWER TRANSISTOR (Diodes)
Features  BVCEO > 60V  IC = 1A Continuous Collector Current  ICM = 2A Peak Pulse Current  RCE(sat) = 195mΩ for a Low Equivalent On-Resistance  hF.