KRC286M Features
* High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.) (IB=5mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. C H KRC281M~KRC286M EPITAXIAL PLANAR NPN TRANS
Datasheet Details
KRC286M, KRC281M
Korea Electronics
380.84 KB
(krc281m - krc286m) epitaxial planar npn transistor.
This datasheet PDF includes multiple part numbers: KRC286M, KRC281M.
Please refer to the document for exact specifications by model.
📁 Related Datasheet
KRC286S EPITAXIAL PLANAR NPN TRANSISTOR (Korea Electronics)
KRC286U EPITAXIAL PLANAR NPN TRANSISTOR (KEC)
KRC281M (KRC281M - KRC286M) EPITAXIAL PLANAR NPN TRANSISTOR (Korea Electronics)
KRC281S EPITAXIAL PLANAR NPN TRANSISTOR (Korea Electronics)
KRC281U EPITAXIAL PLANAR NPN TRANSISTOR (KEC)
KRC282M (KRC281M - KRC286M) EPITAXIAL PLANAR NPN TRANSISTOR (Korea Electronics)
KRC282S EPITAXIAL PLANAR NPN TRANSISTOR (Korea Electronics)
KRC282U EPITAXIAL PLANAR NPN TRANSISTOR (KEC)
KRC286M Distributor
