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KRC286S

EPITAXIAL PLANAR NPN TRANSISTOR

KRC286S Features

* High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.) (IB=5mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. EQUIVALENT CIRCUIT C R1 B KRC281S~KRC286S EPIT

KRC286S Datasheet (343.90 KB)

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Datasheet Details

Part number:

KRC286S

Manufacturer:

Korea Electronics

File Size:

343.90 KB

Description:

Epitaxial planar npn transistor.

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KRC286S EPITAXIAL PLANAR NPN TRANSISTOR Korea Electronics

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