LMN3368ASF 30V N-Channel Enhancement Mode MOSFET

Description

LMN3368ASF Rev.1.0 LMN3368ASF 30V N-Channel Enhancement Mode MOSFETs .
The N-Channel enhancement mode power field effect transistor is using trench DMOS technology.

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Datasheet Specifications

Part number: LMN3368ASF
Manufacturer: LFC semi
File Size: 602.15 KB
Datasheet: LMN3368ASF-LFCsemi.pdf
Description: 30V N-Channel Enhancement Mode MOSFET

Features

* RDS(ON) =6mΩ @ VGS=10V
* RDS(ON) =9.8mΩ @ VGS=4.5V

Applications

* Applications
* MB / VGA / Vcore
* POL

LMN3368ASF Distributors

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LMN3368ASF 30V N-Channel Enhancement Mode MOSFET LFC semi

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