2SC2230 - SILICON NPN TRANSISTOR

LZG

Datasheet Details

High voltage, high DC current gain. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO 200 V VCEO VEBO 2SC2230 2SC2230A 160 180 V 5.0 V IC 100 mA IB 50 mA PC 800 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Cob VCB=200V IE=0 VEB=5.0V IC=0 VCE=10V IC=10mA VCE=10V IC=50mA IC=50mA IB=5.0mA VCE=10V IC=1.0mA VCE=10V IC=10mA VCB=10V IE=0 f=1.0MHz Min 120 80 0.5 50 Rating.

📁 2SC2230 Similar Datasheet

2SC2230A - Silicon NPN Triple Diffused Type Transistor (Toshiba)
2SC2231 - SILICON NPN TRANSISTOR (Toshiba)
2SC2231A - SILICON NPN TRANSISTOR (Toshiba)
2SC2233 - SILICON NPN TRANSISTOR (Toshiba)
2SC2235 - TRANSISTOR (Toshiba Semiconductor)
2SC2236 - NPN Transistor (Toshiba Semiconductor)
2SC2236-Y - NPN Transistor (MCC)
2SC2237 - NPN EPITAXIAL PLANAR TYPE TRANSISTOR (Mitsubishi Electric Semiconductor)

Other Datasheets by LZG

Published: Dec 24, 2016 |