SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
2SC2233
TV HOR I ZONTAL DEFLECT I ON OUTPUT APPL I CAT I ONS.
FEATURES: . Large Collector Current Capability. . Large Collector Power Dissipation Capability.
Unit in mm
^10.3MAX. .03.63:0:2
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current
ic ICP
Base Current
IB
Collector Power Dissipation
Ta=25°C Tc=25°C
PC
Junction Temperature
T-i
Storage Temperature Range
stg
RATING 200 60
UNIT
10
1.5 40
150 -55-150
W
"°C °c
1.5MAX.
Q76
2.5 4
2.5 4
in
o 1 23
.
2SC2233 Datasheet
