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2SC2230A - Silicon NPN Triple Diffused Type Transistor

This page provides the datasheet information for the 2SC2230A, a member of the 2SC2230 Silicon NPN Triple Diffused Type Transistor family.

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Datasheet Details

Part number 2SC2230A
Manufacturer Toshiba
File Size 153.21 KB
Description Silicon NPN Triple Diffused Type Transistor
Datasheet download datasheet 2SC2230A Datasheet
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2SC2230,2SC2230A TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC2230,2SC2230A High-Voltage General Amplifier Applications Color TV Class-B Sound Output Applications Unit: mm • • High breakdown voltage: VCEO = 180 V (2SC2230A) High DC current gain Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range 2SC2230 2SC2230A Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 200 160 180 5 100 50 800 150 −55 to 150 Unit V V V mA mA mW °C °C JEDEC JEITA TOSHIBA TO-92MOD ― 2-5J1A Weight: 0.36 g (typ.
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