* High voltage, small collector output capacitance. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC IB PC Tj Tstg 300 300 7.0 100 50 1.3 150 -55～150 V V V mA mA W ℃ ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition Rating Max Unit Min Typ ICBO IEB
2SC5027
LZG
211.74 KB
Silicon npn transistor.
2SC5027(3DA5027)
NPN /SILICON NPN TRANSISTOR
:,,/Purpose: High voltage
switching and amplifier applications, color TV chroma output applications an.
📁 Related Datasheet
2SC5021 - NPN TRANSISTOR
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.
2SC5022 - NPN TRANSISTOR
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2SC5022
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Application
High voltage amplifier
Features
• High breakdown voltage V (BR)CEO = 1500 V Min
Outline
TO-220FM
1.
2SC5022 - Silicon NPN Transistor
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To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
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2SC5023 - Silicon NPN Epitaxial Type Transistor
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..
2SC5023
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High frequency amplifier
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Features
• Excellent high frequency characteristic.
2SC5024 - Silicon NPN Epitaxial Type Transistor
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2SC5024
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High frequency amplifier
Features
• Excellent high frequency characteristics fT = 300 MHz typ
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2SC5025 - Silicon NPN Transistor
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2SC5025
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• Excellent high frequency characteristics fT = 1.2 GHz typ • .
2SC5026 - NPN Transistor
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2SC5026
Silicon NPN epitaxial planar type
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4.5±0.1 1.6±0.2
Unit: mm
1.5±.
2SC5026 - Silicon NPN Transistor
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SMD Type
Silicon NPN Epitaxial Planar Type 2SC5026
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Features
Low collector-emitter saturation voltage VCE(sat). High collector-emitter vo.
