3DD313 Datasheet - LZG

3DD313 SILICON NPN TRANSISTOR

2SD313(3DD313) :。 NPN /SILICON NPN TRANSISTOR Purpose: Low frequency power amplifier applications. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC ICP PC(Ta=25℃) PC(TC=25℃) Tj Tstg 60 60 5.0 3.0 8.0 1.75 30 150 -55～150 V V V A A W W ℃ ℃ /Electrical characteristics(Ta=25℃) Symbol Test Condition Rating Max Unit Min Typ ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Cob VCB=20V VCE=60V VEB=4.0V VCE=2.0V VCE=2.0V IC=2.0A VCE=2.0V VCE=5.0V VCB=10V IE=0.

3DD313 Datasheet (358.23 KB)