* Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 250 V ID(Tc=25℃) 8.1 A ID(Tc=100℃) 5.1 A IDM 32.4 A VGSS ±30 V EAS 200 mJ EAR 7.4 mJ IAR 8.1 A PD(Tc=25℃) 38 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃)
IRFS634
LZG
208.51 KB
N-channel mosfet.
IRFS634(CS634F)
N-Channel MOSFET/N MOS
: DC/DC 。
Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch .
📁 Related Datasheet
IRFS630 - 200V/9A POWER MOSFET
(TAITRON)
200V/9A POWER MOSFET (N-Channel) IRF630/IRFS630 200V/9A Power MOSFET (N-Channel)
General Description
• IRF630/IRFS630 are N-Channel enhancement mode p.
IRFS630 - N-CHANNEL MOSFET
(BLUE ROCKET ELECTRONICS)
IRFS630
Rev.D Mar.-2016
DATA SHEET
/ Descriptions TO-220F N MOS 。N-CHANNEL MOSFET in a TO-220F Plastic Package.
/ Features
,,。 Low gate charge.
IRFS630 - N-Channel Power MOSFET
(Samsung)
.
IRFS630A - N-Channel MOSFET Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFS630A
FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide T.
IRFS630A - Advanced Power MOSFET
(Fairchild)
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope.
IRFS630B - 200V N-Channel MOSFET
(Fairchild)
IRF630B/IRFS630B
IRF630B/IRFS630B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produ.
IRFS631 - N-Channel Power MOSFET
(Samsung)
.
IRFS634 - 250V/5.5A N-Channel Power MOSFET
(TAITRON)
250V/5.5A N-Channel Power MOSFET (Discontinued)
IRFS634 SAMSUNG
General Description
Low on resistance Improved inductive ruggedness Fast switc.
