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LMUN5116DW1T1G, LMUN5111DW1T1G Datasheet - Leshan Radio Company

LMUN5116DW1T1G - Dual Bias Resistor Transistors

LESHAN RADIO COMPANY, LTD.

Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base emitter resistor.

These digital transistors are designed to replace a single device and its external resistor bias network.

The BRT eliminates these individual components by integrating them into a s

LMUN5116DW1T1G Features

* com 0.1 0 10 20 30 40 50 I C ,COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current 6/12 LESHAN RADIO COMPANY, LTD. LMUN5111DW1T1G TYPICAL ELECTRICAL CHARACTERISTICS

* LMUN5113DW1T1G V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) Series 0.1 h FE , DC CURRENT GAIN (NOR

LMUN5111DW1T1G_LeshanRadioCompany.pdf

This datasheet PDF includes multiple part numbers: LMUN5116DW1T1G, LMUN5111DW1T1G. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

LMUN5116DW1T1G, LMUN5111DW1T1G

Manufacturer:

Leshan Radio Company

File Size:

379.19 KB

Description:

Dual bias resistor transistors.

Note:

This datasheet PDF includes multiple part numbers: LMUN5116DW1T1G, LMUN5111DW1T1G.
Please refer to the document for exact specifications by model.

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