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LBAS16TT1G Silicon Switching Diode

LBAS16TT1G Description

LESHAN RADIO COMPANY, LTD.Silicon Switching Diode .

LBAS16TT1G Applications

* Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBAS16TT1G S-LBAS16TT1G MAXIMUM RATINGS (TA = 25oC) Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 µs Total Power Dissipation, One Diode Loaded

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Datasheet Details

Part number
LBAS16TT1G
Manufacturer
Leshan Radio Company
File Size
221.08 KB
Datasheet
LBAS16TT1G-LeshanRadioCompany.pdf
Description
Silicon Switching Diode

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Silicon Switching Diode Leshan Radio Company
Leshan Radio Company LBAS16TT1G-like datasheet