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LMUN5211DW1T1G Dual Bias ResistorTransistors

LMUN5211DW1T1G Description

LESHAN RADIO COMPANY, LTD.Dual Bias ResistorTransistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Re.

LMUN5211DW1T1G Features

* 5211DW1T1G Series h FE , DC CURRENT GAIN (NORMALIZED) V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS
* LMUN5212DW1T1 10 1000 1 100 0.1 C ob CAPACITANCE (pF) 0.01 0 4 20 40 I C , COLLECTOR CURRENT (mA) Figure 7. V CE(sat) versus I C 10 50 1 100 10 I

LMUN5211DW1T1G Applications

* where board space is at a premium.
* Simplifies Circuit Design
* Reduces Board Space
* Reduces Component Count
* We declare that the material of product compliance with RoHS requirements. LMUN5211DW1T1G Series 6 5 4 1 2 3 SC-88/SOT-363 MAXIMUM RATINGS (T A = 25°

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Datasheet Details

Part number
LMUN5211DW1T1G
Manufacturer
Leshan Radio Company
File Size
186.13 KB
Datasheet
LMUN5211DW1T1G-LeshanRadioCompany.pdf
Description
Dual Bias ResistorTransistors

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Dual Bias ResistorTransistors Leshan Radio Company
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