* Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400 @ 8/20us www.DataSheet4U.com High off state Impedance and low on state voltage Plastic material has UL flammability classification 94V-0 SMC SMC A DIM. A B C B C D E MIN. 6.6
TC1100H
Lite-On Technology
80.40 KB
Surface mount thyristor surge protective device.
LITE-ON SEMICONDUCTOR
TC0640H thru TC3500H
Bi-Directional VDRM IPP - 58 to 320 Volts - 100 Amperes
SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE
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📁 Related Datasheet
TC1100H - SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE
(Lite-On)
LITE-ON SEMICONDUCTOR
TC0640H thru TC3500H
Bi-Directional VDRM IPP - 58 to 320 Volts - 100 Amperes
SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE
.
TC110 - PFM/PWM Step-Up DC/DC Controller
(Microchip)
TC110
PFM/PWM Step-Up DC/DC Controller
Features
• • • • • Assured Start-up at 0.9V 50µA (Typ) Supply Current (fOSC = 100kHz) 300mA Output Current @ VI.
TC1101 - Low Noise and Medium Power GaAs FETs
(Transcom)
TRANSCOM
TC1101
January 2002
Low Noise and Medium Power GaAs FETs
FEATURES • • • • • • • Low Noise Figure: NF = 0.5 dB Typical at 12 GHz High Associa.
TC1102 - Super Low Noise GaAs FETs
(Transcom)
TRANSCOM
TC1102
January 2002
Super Low Noise GaAs FETs
FEATURES • • • • • Low Noise Figure: NF = 0.5 dB Typical at 12 GHz High Associated Gain: Ga = .
TC1102 - SMD TELECOIL 10.5X1.4X2MM
(Premo)
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TC1107 - 300mA CMOS LDO
(Microchip)
TC1107
300mA CMOS LDO with Shutdown and VREF Bypass
Features
• • • • • • • • • Extremely Low Supply Current (50µA, Typ.) Very Low Dropout Voltage 300m.
TC1108 - 300mA CMOS LDO
(Microchip)
TC1108
300mA CMOS LDO
Features
• • • • • • Extremely Low Supply Current (50µA, Typ.) Very Low Dropout Voltage 300mA Output Current High Output Voltage.
TC110G03 - CMOS Gate Array
(Toshiba)
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