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TC1102 - Super Low Noise GaAs FETs

TC1102 Description

TRANSCOM TC1102 January 2002 Super Low Noise GaAs FETs .
The TC1102 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure and high associated gain.

TC1102 Applications

* All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol NF Ga IDSS gm VP BVDGO Rth CONDITIONS Noise Figure at VDS = 2 V, IDS = 10 mA,, f = 12GHz Associated Gain

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Datasheet Details

Part number
TC1102
Manufacturer
Transcom
File Size
112.69 KB
Datasheet
TC1102_Transcom.pdf
Description
Super Low Noise GaAs FETs

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