TC1301 Low Noise and Medium Power GaAs FETs

Transcom

Description

TC1301 REV.2_04/12/2004 Low Noise and Medium Power GaAs FETs .
The TC1301 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dyna.

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Datasheet Specifications

Part number: TC1301
Manufacturer: Transcom
File Size: 241.07 KB
Datasheet: TC1301_Transcom.pdf
Description: Low Noise and Medium Power GaAs FETs

Features

* Low Noise Figure: NF = 0.8 dB Typical at 12 GHz www. DataSheet4U. com
* High Associated Gain: Ga = 10 dB Typical at 12 GHz
* High Dynamic Range: 1 dB Compression Power P-1 = 24 dBm at 12 GHz
* Breakdown Voltage: BVDGO ≥ 9 V Lg = 0.25 µm, Wg = 600 µ

Applications

* including a wide range of commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol NF Ga P1dB GL IDSS gm VP BVDGO Rth CONDIT

TC1301 Distributors

📁 Related Datasheet

TC1301A TC1301B TC1300 TC1300H TC1302A TC1302B

📌 All Tags

TC1301 Low Noise and Medium Power GaAs FETs Transcom

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