Datasheet Specifications
- Part number
- TC1101
- Manufacturer
- Transcom
- File Size
- 157.24 KB
- Datasheet
- TC1101_Transcom.pdf
- Description
- Low Noise and Medium Power GaAs FETs
Description
TRANSCOM TC1101 January 2002 Low Noise and Medium Power GaAs FETs .Features
* Low Noise Figure: NF = 0.5 dB Typical at 12 GHz High Associated Gain: Ga = 12 dB Typical at 12 GHz High Dynamic Range: 1 dB Compression Power P-1 = 18 dBm at 12 GHz Breakdown Voltage: BVDGO ≥ 9 V Lg = 0.25 µm, Wg = 160 µm All-GoldApplications
* including a wide range of commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol NF Ga P1dB GL IDSS gm VP BVDGO Rth ConditTC1101 Distributors
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