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TC1101 - Low Noise and Medium Power GaAs FETs

TC1101 Description

TRANSCOM TC1101 January 2002 Low Noise and Medium Power GaAs FETs .
The TC1101 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dyna.

TC1101 Features

* Low Noise Figure: NF = 0.5 dB Typical at 12 GHz High Associated Gain: Ga = 12 dB Typical at 12 GHz High Dynamic Range: 1 dB Compression Power P-1 = 18 dBm at 12 GHz Breakdown Voltage: BVDGO ≥ 9 V Lg = 0.25 µm, Wg = 160 µm All-Gold

TC1101 Applications

* including a wide range of commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol NF Ga P1dB GL IDSS gm VP BVDGO Rth Condit

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Datasheet Details

Part number
TC1101
Manufacturer
Transcom
File Size
157.24 KB
Datasheet
TC1101_Transcom.pdf
Description
Low Noise and Medium Power GaAs FETs

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Low Noise and Medium Power GaAs FETs Transcom
Transcom TC1101-like datasheet