TC1101

Low Noise and Medium Power GaAs FETs

Transcom

TC1101 Features

* Low Noise Figure: NF = 0.5 dB Typical at 12 GHz High Associated Gain: Ga = 12 dB Typical at 12 GHz High Dynamic Range: 1 dB Compression Power P-1 = 18 dBm at 12 GHz Breakdown Voltage: BVDGO ≥ 9 V Lg = 0.25 µm, Wg = 160 µm All-Gold

TC1101 General Description

The TC1101 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range. The device can be used in circuits up to 40 GHz and suitable for low noise and medium power amplifier applications including a wide range o.

TC1101 Datasheet (157.24 KB)

TC1101 Datasheet Preview — Preview of TC1101 PDF

Datasheet Details

Part number:

TC1101

Manufacturer:

Transcom

File Size:

157.24 KB

Description:

Low noise and medium power gaas fets.

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TC1101 Low Noise and Medium Power GaAs FETs Transcom

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TC1101 Features

TC1101 General Description

Datasheet Details

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