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TC1101 - Low Noise and Medium Power GaAs FETs

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Transcom

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TC1101 Low Noise and Medium Power GaAs FETs by Transcom - Datasheet Preview — Datasheet preview – TC1101

Datasheet Details

Part number	TC1101
Manufacturer	Transcom
File Size	157.24 KB
Description	Low Noise and Medium Power GaAs FETs
Datasheet	TC1101 Datasheet
Additional preview pages of the TC1101 datasheet.

Product details

Description

The TC1101 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range.

Features

Low Noise Figure: NF = 0.5 dB Typical at 12 GHz High Associated Gain: Ga = 12 dB Typical at 12 GHz High Dynamic Range: 1 dB Compression Power P-1 = 18 dBm at 12 GHz Breakdown Voltage: BVDGO ≥ 9 V Lg = 0.25 µm, Wg = 160 µm All-Gold Metallization for High Reliability 100 % DC Tested PHOTO.

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Other Datasheets by Transcom

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Published: Jul 9, 2007 |