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LSC11N65 Datasheet - Lonten

LSC11N65 N-channel MOSFET

LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Product Summary VDS @ Tj,max 700V RDS(ON),max 0.35Ω.

LSC11N65 Features

* Ultra low Rdson

* Ultra low gate charge (typ. Qg = 34nC)

* 100% UIS tested

* RoHS compliant D G S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Drain-Source Voltage Continuous drain current Pulsed drain current 1) ( TC = 25°C ) ( TC = 100°C ) Gate-Source voltage

LSC11N65-Lonten.pdf

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Datasheet Details

Part number:

LSC11N65

Manufacturer:

Lonten

File Size:

480.89 KB

Description:

N-channel mosfet.

LSC11N65 Distributor

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LSC11N65 LSC11N65 N-channel MOSFET Lonten