Datasheet4U Logo Datasheet4U.com

LSC11N65

N-channel MOSFET

LSC11N65 Features

* Ultra low Rdson

* Ultra low gate charge (typ. Qg = 34nC)

* 100% UIS tested

* RoHS compliant D G S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Drain-Source Voltage Continuous drain current Pulsed drain current 1) ( TC = 25°C ) ( TC = 100°C ) Gate-Source voltage

LSC11N65 General Description

LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Product Summary VDS @ Tj,max 700V RDS(ON),max 0.35Ω.

LSC11N65 Datasheet (480.89 KB)

Preview of LSC11N65 PDF

Datasheet Details

Part number:

LSC11N65

Manufacturer:

Lonten

File Size:

480.89 KB

Description:

N-channel mosfet.

📁 Related Datasheet

LSC11N60 N-channel MOSFET (Lonten)

LSC11N65E N-channel 650V Power MOSFET (Lonten)

LSC10120FW SILICON CARBIDE SCHOTTKY DIODE (DIODES)

LSC1300 Miniature Laser (BT&D)

LSC Low Power Surface Mount Crystal Oscillator (STATEK CORPORATION)

LSC SCREW TERMINAL ALUMINUM ELECTROLYTIC CAPACITORS (Rubycon)

LSC04N65 N-channel MOSFET (Lonten)

LSC04N70A N-channel Power MOSFET (LONTEN)

LSC06065TDW SILICON CARBIDE SCHOTTKY DIODE (DIODES)

LSC06065W SILICON CARBIDE SCHOTTKY DIODE (DIODES)

TAGS

LSC11N65 N-channel MOSFET Lonten

Image Gallery

LSC11N65 Datasheet Preview Page 2 LSC11N65 Datasheet Preview Page 3

LSC11N65 Distributor